| 차시 |
내용 |
| 1차시 |
[1] 1. NAND program operation |
| 2차시 |
[2] 2. Inhibit bias and Self-boosting |
| 3차시 |
[3] 3. Verify operation |
| 4차시 |
[4] 4. ISPP and MLC concept |
| 5차시 |
[5] 5. Back-gate tunneling and Excess program |
| 6차시 |
[6] 6. Block erase by FN tunneling |
| 7차시 |
[7] 7. Disturb and Cell-to-cell interference |
| 8차시 |
[8] 8. E/W cycle endurance and Data retention |
| 9차시 |
[9] 9. NAND controller |
| 10차시 |
[10] 10. NAND flash market & Foundry |
| 11차시 |
[11] 11. 3D-NAND concept |
| 12차시 |
[12] 12. 3D-NAND process architecture |
| 13차시 |
[13] 13. Summary (1) |
| 14차시 |
[14] 14. Summary (2) |
| 15차시 |
[15] 15. Summary (3) |
| 16차시 |
[16] 16. NAND flash memory chip function |
